Manufacturing Engineering & Technology
7th Edition
ISBN: 9780133128741
Author: Serope Kalpakjian, Steven Schmid
Publisher: Prentice Hall
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Question
Chapter 28, Problem 30QTP
To determine
A chlorine-based polysilicon etching process displays a polysilicon-to-resist selectivity of
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Answer each of the following questions in one to three sentences. (a) What is lithography field? (b) What is misalignment in lithography? (e) What is selectivity in an etching process? (d) What is end-point detection in an etching process?
Write in detail following terminologies according to wafer fabrication processes:
a. Diffusion and Ion Implantation
b. Metallization
c. Etching
A siilicon boule has been processed through grinding to provide a cylinder whose diameter = 281 mm and whose length = 899 mm. Next, it will be sliced into wafers 0.8 mm thick using a cut-off saw with a kerf = 0.5 mm. The wafer thus produced will be used to fabricate as many IC chips as possible for the personal computer market. Each IC has a market value to the company of $108. Each chip is square with 17 mm on a side. The processable area of each wafer is defined by a diameter = 265 mm. Estimate the value of all of the IC chips that could be produced (in $), asssuming an overall yield of 84% good product.
Chapter 28 Solutions
Manufacturing Engineering & Technology
Ch. 28 - Define the terms wafer, chip, die, device,...Ch. 28 - Why is silicon the semiconductor most used in...Ch. 28 - What do the abbreviations BJT, MOSFET, VLSI,...Ch. 28 - Prob. 4RQCh. 28 - Prob. 5RQCh. 28 - What are the purposes of prebaking and...Ch. 28 - Define selectivity and isotropy, and their...Ch. 28 - Prob. 8RQCh. 28 - Prob. 9RQCh. 28 - What are the levels of interconnection?
Ch. 28 - Which is cleaner, a Class-10 or a Class-1 clean...Ch. 28 - Prob. 12RQCh. 28 - What is a via? Why is it important?Ch. 28 - Describe how electrical connections are...Ch. 28 - Prob. 15RQCh. 28 - Prob. 16RQCh. 28 - Comment on your observations regarding the...Ch. 28 - Describe how n-type and p-type dopants differ.Ch. 28 - Prob. 19QLPCh. 28 - How is epitaxy different from other techniques...Ch. 28 - Note that, in a horizontal epitaxial reactor...Ch. 28 - The table that follows describes three...Ch. 28 - Prob. 23QLPCh. 28 - What is accelerated life testing? Why is it...Ch. 28 - Explain the difference between a die, a chip, anda...Ch. 28 - A common problem in ion implantation is...Ch. 28 - Examine the hole profiles shown in Fig. P28.27...Ch. 28 - Referring to Fig. 28.24, sketch the shape of the...Ch. 28 - Prob. 29QTPCh. 28 - Prob. 30QTPCh. 28 - Prob. 31QTPCh. 28 - A certain design rule calls for metal lines to be...Ch. 28 - Prob. 33QTPCh. 28 - If a square mask of side length 100 m is placed on...Ch. 28 - Obtain an expression for the width of the trench...Ch. 28 - Prob. 36SDPCh. 28 - Inspect various electronic and computer equipment,...Ch. 28 - Describe your understanding of the important...Ch. 28 - Make a survey of the necessity for clean rooms in...Ch. 28 - Prob. 40SDPCh. 28 - Prob. 41SDPCh. 28 - Estimate the time required to etch a spur gear...Ch. 28 - Prob. 43SDPCh. 28 - Review the specific devices, shown in Fig. V.2....
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- Stereolithography is a additive manufacturing process. based foil O powder filament liquidarrow_forwardTwo students decided to print a prototype for a gear. Student A use layer thickness of .1 mm and an infill density of 25%. Student B use a layer thickness of 0.07 mm and an infill density of 45%. Which student will take less time to print the gear? Select one: Stu nt since the ckness of layer is smaller and the infill density is higher. O We can't decide which process takes less time O Student A since the thickness of the layer is larger and the infill density is lower. Student B because thickness is higher than B and the infill density has no effect on the process speed. Student A because thickness is higher than B and the infill density has no effect on the process speed.arrow_forwardA boron implant at 30 keV is done through a gate oxide that is 15nm thick, into a silicon substrate. LSS tables show a boron implant range in oxide at this energy of 100 nm and a standard deviation of 25 nm. Calculate the fraction of boron implant that is absorbed in the oxide.arrow_forward
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