As seen in Problem 3.109, silicon carbide nanowires of diameter D = 15 nm can be grown onto a solid silicon carbide surface by carefully depositing droplets of catalyst liquid onto a flat silicon carbide substrate. Silicon carbide nanowires grow upward from the deposited drops, and if the drops are deposited in a pattern, an array of nanowire tins can be grown, forming a silicon carbide nano-heat sink. Consider tinned and untinned electronics packages in which an extremely small, 10 μm × 10 μm electronics device is sandwiched between two d = 100 -nm-thick silicon carbide sheets. In both cases, the coolant is a dielectric liquid at 20°C. A heat transfer coefficient of h = 1 × 10 5 W/m 2 ⋅ K exists on the top and bottom of the unfinned package and on all surfaces of the exposed silicon carbide tins. which are each L = 300 nm long. Each nano-heat sink includes a 200 × 200 array of nanofins. Determine the maximum allowable heat rate that can be generated by the electronic device so that its temperature is maintained at T t < 85 ° C for the untinned and tinned packages.
As seen in Problem 3.109, silicon carbide nanowires of diameter D = 15 nm can be grown onto a solid silicon carbide surface by carefully depositing droplets of catalyst liquid onto a flat silicon carbide substrate. Silicon carbide nanowires grow upward from the deposited drops, and if the drops are deposited in a pattern, an array of nanowire tins can be grown, forming a silicon carbide nano-heat sink. Consider tinned and untinned electronics packages in which an extremely small, 10 μm × 10 μm electronics device is sandwiched between two d = 100 -nm-thick silicon carbide sheets. In both cases, the coolant is a dielectric liquid at 20°C. A heat transfer coefficient of h = 1 × 10 5 W/m 2 ⋅ K exists on the top and bottom of the unfinned package and on all surfaces of the exposed silicon carbide tins. which are each L = 300 nm long. Each nano-heat sink includes a 200 × 200 array of nanofins. Determine the maximum allowable heat rate that can be generated by the electronic device so that its temperature is maintained at T t < 85 ° C for the untinned and tinned packages.
Solution Summary: The author calculates the maximum allowable heat rate that can be generated by the electronic device. The temperature of the dielectric liquid used as coolant = 20 o C.
As seen in Problem 3.109, silicon carbide nanowires of diameter
D
=
15
nm
can be grown onto a solid silicon carbide surface by carefully depositing droplets of catalyst liquid onto a flat silicon carbide substrate. Silicon carbide nanowires grow upward from the deposited drops, and if the drops are deposited in a pattern, an array of nanowire tins can be grown, forming a silicon carbide nano-heat sink. Consider tinned and untinned electronics packages in which an extremely small,
10
μm
×
10
μm
electronics device is sandwiched between two
d
=
100
-nm-thick silicon carbide sheets. In both cases, the coolant is a dielectric liquid at 20°C. A heat transfer coefficient of
h
=
1
×
10
5
W/m
2
⋅
K
exists on the top and bottom of the unfinned package and on all surfaces of the exposed silicon carbide tins. which are each
L
=
300
nm
long. Each nano-heat sink includes a
200
×
200
array of nanofins. Determine the maximum allowable heat rate that can be generated by the electronic device so that its temperature is maintained at
T
t
<
85
°
C
for the untinned and tinned packages.
PROBLEM: IIC-21
BOOK: ENGINEERING THERMOFLUIDS, M. MASSOUD
One end of a 40 cm metal rod 2.0 cm2 in cross section is in a steam bath while the other end is embedded in ice. It is observed that 13.3 grams of ice melted in 15 minutes from the heat conducted by the rod. What is the thermal conductivity of the rod.
(INCLUDE FBD)
An electrical resistance wire made of tungsten dissipates heat to the surroundings at a constant rate.
Which of the following equations are you going to use to compute for the temperature at any point
within the wire when the temperature throughout the whole wire no longer changes with time? Assume
that the wire can be approximated as a thin cylinder.
a. Fourier-Biot equation
b. Poisson equation
c. Diffusion equation
d. Laplace equation
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