University Physics with Modern Physics (14th Edition)
14th Edition
ISBN: 9780321973610
Author: Hugh D. Young, Roger A. Freedman
Publisher: PEARSON
expand_more
expand_more
format_list_bulleted
Question
Chapter 42, Problem 42.32E
(a)
To determine
The voltage needed to produce a positive current of
(b)
To determine
The negative current for a voltage equal to the negative of the value of voltage calculated in part (a).
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
(a) A forward-bias voltage of 15.0 mV produces a positive current of 9.25 mA through a p-n junction at 300 K. What does the positive current become if the forward-bias voltage is reduced to 10.0 mV? (b) For reverse-bias voltages of -15.0 mV and -10.0 mV, what is the reverse-bias negative current?
A Si p- n junction with cross sectional area A= 0.01cm? is formed with N3=2x1017 cm3, Na=
1017cm3. Calculate: a) contact potential b) the depletion region width and c) the junction
capacity at 0 and -2 Volts.
The figure shows the pn junction 250 micrometers long and made of silicon with a surface area of 100 micrometers square. In this pn junction, the I region is doped with 10 ^ 19 cm ^ -3 and in the II: region with 10 ^ 17 cm ^ -3 atoms. Only when the S1 switch is closed, the maximum is drawn from the "a-b" ends and 250 mA flows from the circuit. The ability of electrons to move in the pn junction is 1200 cm ^ 2 / V.s, and the ability of the holes to move is 400 cm ^ 2 / V.s. What is the channel width accordingly? (W =?)
Chapter 42 Solutions
University Physics with Modern Physics (14th Edition)
Ch. 42.1 - If electrons obeyed the exclusion principle but...Ch. 42.2 - Prob. 42.2TYUCh. 42.3 - Prob. 42.3TYUCh. 42.4 - One type of thermometer works by measuring the...Ch. 42.5 - Prob. 42.5TYUCh. 42.6 - Prob. 42.6TYUCh. 42.7 - Suppose a negative charge is placed on the gate of...Ch. 42 - Van der Waals bonds occur in many molecules, but...Ch. 42 - Prob. 42.2DQCh. 42 - The H2+ molecule consists of two hydrogen nuclei...
Ch. 42 - The moment of inertia for an axis through the...Ch. 42 - Prob. 42.5DQCh. 42 - Prob. 42.6DQCh. 42 - Prob. 42.7DQCh. 42 - The air you are breathing contains primarily...Ch. 42 - Prob. 42.9DQCh. 42 - Prob. 42.10DQCh. 42 - What factors determine whether a material is a...Ch. 42 - Prob. 42.12DQCh. 42 - Prob. 42.13DQCh. 42 - Prob. 42.14DQCh. 42 - Prob. 42.15DQCh. 42 - Prob. 42.16DQCh. 42 - Prob. 42.17DQCh. 42 - Prob. 42.18DQCh. 42 - Prob. 42.19DQCh. 42 - Prob. 42.20DQCh. 42 - Prob. 42.21DQCh. 42 - Prob. 42.22DQCh. 42 - Prob. 42.23DQCh. 42 - Prob. 42.24DQCh. 42 - If the energy of the H2 covalent bond is 4.48 eV,...Ch. 42 - An Ionic Bond, (a) Calculate the electric...Ch. 42 - Prob. 42.3ECh. 42 - Prob. 42.4ECh. 42 - Prob. 42.5ECh. 42 - Prob. 42.6ECh. 42 - Prob. 42.7ECh. 42 - Two atoms of cesium (Cs) can form a Cs2 molecule....Ch. 42 - Prob. 42.9ECh. 42 - Prob. 42.10ECh. 42 - A lithium atom has mass 1.17 1026 kg, and a...Ch. 42 - Prob. 42.12ECh. 42 - When a hypothetical diatomic molecule having atoms...Ch. 42 - The vibrational and rotational energies of the CO...Ch. 42 - Prob. 42.15ECh. 42 - Prob. 42.16ECh. 42 - Prob. 42.17ECh. 42 - Prob. 42.18ECh. 42 - Prob. 42.19ECh. 42 - Prob. 42.20ECh. 42 - Prob. 42.21ECh. 42 - Prob. 42.22ECh. 42 - Prob. 42.23ECh. 42 - Prob. 42.24ECh. 42 - Prob. 42.25ECh. 42 - Prob. 42.26ECh. 42 - Prob. 42.27ECh. 42 - Prob. 42.28ECh. 42 - Prob. 42.29ECh. 42 - Prob. 42.30ECh. 42 - Prob. 42.31ECh. 42 - Prob. 42.32ECh. 42 - Prob. 42.33PCh. 42 - Prob. 42.34PCh. 42 - Prob. 42.35PCh. 42 - The binding energy of a potassium chloride...Ch. 42 - (a) For the sodium chloride molecule (NaCl)...Ch. 42 - Prob. 42.38PCh. 42 - Prob. 42.39PCh. 42 - Prob. 42.40PCh. 42 - Prob. 42.41PCh. 42 - Prob. 42.42PCh. 42 - Prob. 42.43PCh. 42 - Prob. 42.44PCh. 42 - Prob. 42.45PCh. 42 - Prob. 42.46PCh. 42 - Prob. 42.47PCh. 42 - Prob. 42.48PCh. 42 - Prob. 42.49PCh. 42 - Prob. 42.50PCh. 42 - Prob. 42.51PCh. 42 - Prob. 42.52PCh. 42 - Prob. 42.53CPCh. 42 - Prob. 42.54CPCh. 42 - Prob. 42.55CPCh. 42 - Prob. 42.56PPCh. 42 - Prob. 42.57PPCh. 42 - Prob. 42.58PP
Knowledge Booster
Similar questions
- An abrupt uniformly doped silicon pn junction is reversed biased by Vg= 20 V. If Na(in n-side)=10" cm, N,(in p-side)=10" cm then the junction capacitance is 20 pF. The junction capacitance if Na(in n-side) increased to 3x10" cm' is equal to ....pF. a) 9 b)21 c)35 d) 52 e) 87arrow_forward(b) A rod of Ge (Germanium) crystal weighing 350 g contains 30 mg of P (phosphorus). (i) What is the concentration of extrinsic charge carriers (per m') in this crystal? (ii) Calculate the conductivity (Ohms' m') of the rod. (iii) What will be the conductivity of the rod if it is additionally doped with a concentration of 100 cm' of Al (aluminum) atoms to the existent phosphorous doping. Use the information below for (b): Mass density of Ge = 5320 Kg/m' Atomic Mass of Ge = 72.6 Mass density of Phosphorous = 1830 Kg/m' Atomic Mass of P = 31,0 Mobility of electrons = 0,10 x10r'cm'V'N Mobility of holes = 0.03x10 cm²V's'arrow_forwardThe hole concentration in a semiconductor at T=300K can be expressed as p(x) =10" exp 20 cm , where x is measured in um. If the hole diffusion coefficient is D, = 50 cm²/s. (1) Determine the hole diffusion current as a function of x. (2) Determine the location X, where the diffusion current is (%) of that at x= 0.arrow_forward
- The current–voltage characteristic curve for a semiconductor diode as a function of temperature T is given by I = I0(eeΔV/kBT - 1)Here the first symbol e represents Euler’s number, the base of natural logarithms. The second e is the magnitude of the electron charge, the kB stands for Boltzmann’s constant, and T is the absolute temperature. (a) Set up a spreadsheet to calculate I and R = ΔV/I for ΔV = 0.400 V to 0.600 Vin increments of 0.005 V. Assume I0 = 1.00 nA. (b) Plot R versus ΔV for T = 280 K, 300 K, and 320 K.arrow_forwardQuestion-5. A semiconductor has an electrical conductivity of 20 (N-m)', whereas the electron and hole mobilities are 0.04 and 0.03 m2/V-s, respectively. The density of the semiconductor is 4.62 g/cm³. The electrical charge of an electron (e) is 1.6 ×10-19 C. The atomic weight of the semiconductor is 59.72 g/mol. Avogadro constant (NA) is 6.023 × 1023 atoms/mol. (a) Compute the intrinsic carrier concentration for the semiconductor at room temperature (25 °C). (b) Compute the number of free electrons per atom for the intrinsic semiconductor at room temperature.arrow_forwardThe hole concentration in silicon at 300 K varies linearly from x=0 to x=0.01 cm. The hole diffusion coefficient is Dp= 10 cm2/sec, the hole diffusion current density is Jdif = 20 A/cm2, and the hole concentration at x=0 is 4x1017 cm-3. Determine the hole concentration at x=0.01 cm.arrow_forward
- Since the reverse (saturation) current passing through a p-n junction with an ideality factor of 1 at 32°C is 50 nA; What is the current in the right direction at a voltage of 0.5 V applied in the right (conduct) direction (feed forward)? A) 8.98 A B) 6.68 A C) 4.18 A D) 1.25 Aarrow_forwardThe electron number density in a semiconductor varies from 1020 m³ to 10¹2 m³ linearly over a distance of 4 µm. Determine the electron diffusion current and electric field at the midpoint if no current flows, He = 0.135 m²V-¹s¹ and T = 300 K.arrow_forward. Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10¹⁹ m-³ and their mobility is 1.6 m² (V-s), then the resistivity of the semiconductor 2 semiconductor (since, it is an n-type contribution of holes is ignored) is close toarrow_forward
- Question 2 (b) Silver is a good conductor and it has a resistivity of 15.9n 2m. () Briefly explain mean free time in electron conduction. (ii) Determine the number density of mobile electrons if their effective mass is the free space value, and the mean interval time is 0.2 ps. (c) Given that the binding energy for hydrogen Estagan= -13.6/n? ev, determine the binding energy of the fifth donor electron in silicon. (d) Calculate the effective density of states in the conduction band and valence band for silicon.arrow_forward1 (a) Using Townsend's second ionization criterion, consider I, 4 x 10-7 A. Consider a = 2.28/cm. If y = 0.0075, find the gap spacing dspark in cm for spark breakdown criterion. Calculate the current I in A for (i) d = 0.45 xdspark , (ii) d = 0.6 x dspark and (iii) d = 0.8 x dspark Show that the current I = Io exp (ad) when d is very small value and y is also very small value. 1,ead 1- y(ead – 1) (b) For a point-plane gaseous dielectric system, suppose values of a = 2.24 / cm and y = 0.0064. d Find the values of for d = 1.25 cm and d = 1.95 cm. ddarrow_forwarda) If the electron concentration increase along the x-axis of a conductor as shown in equation below: n=3-1030x2+2- 102x+1026 And D=1.2 x 10-4 m/s. Find the diffusion current at x =Smm? b) Find the minimum electron concentration nmin in semiconductor?arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
College PhysicsPhysicsISBN:9781305952300Author:Raymond A. Serway, Chris VuillePublisher:Cengage Learning
University Physics (14th Edition)PhysicsISBN:9780133969290Author:Hugh D. Young, Roger A. FreedmanPublisher:PEARSON
Introduction To Quantum MechanicsPhysicsISBN:9781107189638Author:Griffiths, David J., Schroeter, Darrell F.Publisher:Cambridge University Press
Physics for Scientists and EngineersPhysicsISBN:9781337553278Author:Raymond A. Serway, John W. JewettPublisher:Cengage Learning
Lecture- Tutorials for Introductory AstronomyPhysicsISBN:9780321820464Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina BrissendenPublisher:Addison-Wesley
College Physics: A Strategic Approach (4th Editio...PhysicsISBN:9780134609034Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart FieldPublisher:PEARSON
College Physics
Physics
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Cengage Learning
University Physics (14th Edition)
Physics
ISBN:9780133969290
Author:Hugh D. Young, Roger A. Freedman
Publisher:PEARSON
Introduction To Quantum Mechanics
Physics
ISBN:9781107189638
Author:Griffiths, David J., Schroeter, Darrell F.
Publisher:Cambridge University Press
Physics for Scientists and Engineers
Physics
ISBN:9781337553278
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Lecture- Tutorials for Introductory Astronomy
Physics
ISBN:9780321820464
Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina Brissenden
Publisher:Addison-Wesley
College Physics: A Strategic Approach (4th Editio...
Physics
ISBN:9780134609034
Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart Field
Publisher:PEARSON