The equipment for heating a wafer during a semiconductor manufacturing process is shown schematically. The wafer is heated by an ion beam source (not shown) to a uniform, steady-state temperature. The large chamber contains the process gas, and its walls are at a uniform temperature of T c h = 400 k . A 5mm x 5mm target area on the wafer is viewed by a radiometer, whose objective lens has a diameter of 25mm and is located 500mm from the wafer. The line-of-sight of the radiometer is 30 ∘ off the wafer normal. (a) In a preproduction test of the equipment, a black panel ( ε ≈ 1.0 ) is mounted in place of the wafer. Calculate the radiant power (W) received by the radiometer if the temperature of the panel is 800 K. (b) The wafer, which is opaque, diffusegray with an emissivity of 0.7, is now placed in the equipment, and the ion beam is adjusted so that the power received by the radiometer is the same as that found for part (a). Calculate the temperature of the wafer for this heating condition.
The equipment for heating a wafer during a semiconductor manufacturing process is shown schematically. The wafer is heated by an ion beam source (not shown) to a uniform, steady-state temperature. The large chamber contains the process gas, and its walls are at a uniform temperature of T c h = 400 k . A 5mm x 5mm target area on the wafer is viewed by a radiometer, whose objective lens has a diameter of 25mm and is located 500mm from the wafer. The line-of-sight of the radiometer is 30 ∘ off the wafer normal. (a) In a preproduction test of the equipment, a black panel ( ε ≈ 1.0 ) is mounted in place of the wafer. Calculate the radiant power (W) received by the radiometer if the temperature of the panel is 800 K. (b) The wafer, which is opaque, diffusegray with an emissivity of 0.7, is now placed in the equipment, and the ion beam is adjusted so that the power received by the radiometer is the same as that found for part (a). Calculate the temperature of the wafer for this heating condition.
Solution Summary: The equation for the radiant power leaving the black panel target and reaching the radiometer is given as lq_bp-rad=left.
The equipment for heating a wafer during a semiconductor manufacturing process is shown schematically. The wafer is heated by an ion beam source (not shown) to a uniform, steady-state temperature. The large chamber contains the process gas, and its walls are at a uniform temperature of
T
c
h
=
400
k
.
A 5mm x 5mm
target area on the wafer is viewed by a radiometer, whose objective lens has a diameter of 25mm and is located 500mm from the wafer. The line-of-sight of the radiometer is
30
∘
off the wafer normal.
(a) In a preproduction test of the equipment, a black panel
(
ε
≈
1.0
)
is mounted in place of the wafer. Calculate the radiant power (W) received by the radiometer if the temperature of the panel is 800 K.
(b) The wafer, which is opaque, diffusegray with an emissivity of 0.7, is now placed in the equipment, and the ion beam is adjusted so that the power received by the radiometer is the same as that found for part (a). Calculate the temperature of the wafer for this heating condition.
The tungsten filament of an incandescent light bulb has a temperature of approximately 3000 K. The emissivity of tungsten is approximately 1/3, and you may assume that it is independent of wavelength.
To increase the efficiency of an incandescent bulb, would you want to raise or lower the temperature? (Some incandescent bulbs do attain slightly higher efficiency by using a different temperature.)
A 3-in-diameter cylindrical wire is coated in 3 inches of polyethylene insulation. The wire can be modeled as a grey body with an emissivity of .85. Due to the electrical resistance, the wire is at a temperature of 300 degrees Celsius. The insulation is also a great body with an emissivity of .95, at a temperature of 40 degrees Celsius. (Assume F12=1). What is the heat flux (W/m^2) of the energy going from the wire to the insulation?
4. The filament of a 75 W light bulb may be considered as a black body radiating into a black enclosure at 70° C. the filament diameter is 0.10 mm and length is 5 em. considering the radiation, determine the filament temperature .
INTERNATIONAL EDITION---Engineering Mechanics: Statics, 14th edition (SI unit)
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