Concept explainers
(a)
Interpretation:
Based on given pictures the metals which relates to it has to be explained.
Concept introduction:
Molecular orbital theory:
Molecular orbital theory describes molecules in electronic structure. Electrons are moving around nuclei in entire molecule. Atomic orbitals in which electrons present in one atom. Molecular orbitals in which electrons are present in more atoms. Bonding and anti-bonding orbitals are found in molecular orbital theory.
(b)
Interpretation:
From the given metals, metal with highest melting point and hardest has to be explained.
Concept introduction:
Molecular orbital theory:
Molecular orbital theory describes molecules in electronic structure. Electrons are moving around nuclei in entire molecule. Atomic orbitals in which electrons present in one atom. Molecular orbitals in which electrons are present in more atoms. Bonding and anti-bonding orbitals are found in molecular orbital theory.
(c)
Interpretation:
From the given metals, metal with lowest melting point and softest has to be explained.
Concept introduction:
Molecular orbital theory:
Molecular orbital theory describes molecules in electronic structure. Electrons are moving around nuclei in entire molecule. Atomic orbitals in which electrons present in one atom. Molecular orbitals in which electrons are present in more atoms. Bonding and anti-bonding orbitals are found in molecular orbital theory.
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General Chemistry: Atoms First
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- The disproportionation of CO to graphite and CO₂ is ther-modynamically favored but slow.(a) What does this mean in terms of the magnitudes of the equi-librium constant (K), rate constant (k), and activation energy (Ea)?(b) Write a balanced equation for the disproportionation of CO.(c) Calculate K꜀ at 298 K. (d) Calculate Kₚ at 298 Karrow_forwardSi is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm³. (a) Is this n-type or p-type and why? (b) What are the electron and hole concentrations at 300K? (use ni = 1010 cm³). (c) Calculate resistivity of Si is doped with donor density of Np = 2x1015 (use n¡ = 10!º cm³) and NA = 0 (use n¡ = 1010 ; µn = 1320 cm²/Vs, µp = 460 cm²/Vs) cm (d) In a Germanium semiconductor at T= 250 K (n¡ = 1x1012 cm³), it is found that po = 4no and that Nd = 0. Determine po, no, and Na. (e) Calculate the intrinsic carrier concentrations of these three bandgap materials at 300K: Eg = 1.12eV; and Eg = 0.66eV; where pre-factors are B=1.08x1031 K*.cm3 (1.12eV) and B = 2.31x1030 K³.cm³ (0.66€V).arrow_forwardUsing Table 22.1, predict the structure of each of the fol- lowing silicate minerals (network, sheets, double chains, and so forth). Give the oxidation state of each atom. (a) Andradite, Ca3Fe2(SiO4)3 (b) Vlasovite, Na,ZrSi,O10 (c) Hardystonite, Ca,ZnSi¿O7 (d) Chrysotile, Mg;Si,O5(OH)4arrow_forward
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