Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 7, Problem 7.135P
To determine
The values of DC emitter current, input resistance
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For the follower circuit in Fig. P7.137, let transistor Q1 have β = 50 and transistor 2 have β = 100, and neglect the effect of ro. Use VBE = 0.7V
(a) Find the dc emitter currents of Q1 and Q2. Also, find the dc voltages VB1 and VB2.(b) If a load resistance RL = 1 kΩ is connected to the output terminal, find the voltage gain from the base to the emitter of Q2, , vo/vb2, and find the input resistance Rib2 looking into the base of Q2. (Hint: Consider Q2 as an emitter follower fed by a voltage Vb2 at its base).(c) Replacing Q2 with its input resistance Rib2 found in (b), analyze the circuit of emitter follower Q1 to determine its input resistance Rin, and the gain from its base to its emitter, ve1/vb1(d) If the circuit is fed with a source having a 100 kΩ resistance, find the transmission to the base of Q1, Vb1/Vsig(e) Find the overall voltage gain Vo/Vsig
Draw Frequency response of
common emitter amplifier and
explain all the parameters in the
graph. Draw the circuit of CE
amplifier that is used to find the
frequency response and give
the main procedure to
implement the experiment
7. Show that the DC alpha of the transistor is given by: 1+
Bac
a dc
CLE C
Compute ade for your transistor at VeE=5.0V and Ig 40µA.
+1
Chapter 7 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
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- Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layersarrow_forward*7.58 The transistor in the circuit shown in Fig. P7.58 is biased to operate in the active mode. Assuming that B is very large, find the collector bias current Ie. Replace the transistor with the small-signal equivalent-circuit model of Fig. 7.27(b) (remember to replace the de power supply with a short circuit). Analyze the resulting amplifier equivalent circuit to show that RE R +r. -aR. %3D v, R; +r, Find the values of these voltage gains (for a 2 1). Now, if the terminal labeled v, is connected to ground, what does the voltage gain v/v, become? +5 V Rc = 3.3 kN 100 kΩ 100 kΩ R = 3.6 kN Figure P7.58arrow_forwardis increased, the Q-point value of VE In a dc-biased transistor circuit, if the value of V BB will Select one: a. not change b. increase C. decrease d. become unstablearrow_forward
- D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit to establish a de emitter current of 1 mA and provide the highest possible voltage gain while allowing for a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies. R₂4 +Vcc RE -VEE Figure 7.53 Biasing the BJT using two power supplies. Resistor R is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source, resulting in almost total 8-independence of the bias current.arrow_forward/ Design a circuit using an n-channel E-MOSFET with the following datasheet specifications: Ixon) = 500 mA at VGS 10 V and VGS(h) = 1 V. Use a (+12 V) dc supply voltage with voltage divider bias. The voltage at the drain with respect to ground is to be (+7.78 V), the voltage at the source with respect to the ground is to be (+2.1 V), and the maximum current from the supply is to be 21.1 mA.arrow_forwardIn the circuit shown, the transistor has a β = 140 and that all the statement below about the transistor are true except: (a) power dissipation of the transistor is 300 mW (b) operating in the active region (c) power delivered by the 5 V source is 1.79 mW (d) in the saturation regionarrow_forward
- 6) the "simplest" model of transistor behavior in this problem, i.e., B = o and IB = 0, with forward bias voltage of AVBE = 0.6V. Consider the following circuit with a transistor and two resistors. You may use 5V a) Determine the output when Vin = 0.5V. 9kN Vout Vin 3002 3kN b) Determine the output when Vin = 1.2 V. c) Determine the output when Vin = 3.6 V.arrow_forwardThe input resistance at the base of a biased transistor depends mainly on: Please select one: a. RB b. β_dc and RE c. RE d. β_dcarrow_forward(a) The NMOS transistor in the source-follower circuit of Fig. P7.122(a) has gm = 10 mA/V and a large r.. Find the open-circuit voltage gain and the output resistance. (b) The NMOS transistor in the common-gate amplifier of Fig. P7.122(b) has g = 10 mA/V and a large r.. Find the input resistance and the voltage gain. (c) If the output of the source follower in (a) is connected to the input of the common-gate amplifier in (b), use the results of (a) and (b) to obtain the overall voltage gain v/v. 5 ΚΩ 2/1/20 10 ΚΩ www 10 ΚΩ Τ Figure P7.122 (b) HH Vl 2 ΚΩarrow_forward
- 1. For the fixed-bias configuration of Fig. 7.75 a. Sketch the transfer characteristics of the device. b. Superimpose the network equation on the same graph. c. Determine ID, and VDS. d. Using Shockley's equation, solve for ID and then find VDS. Compare with the solutions of part (c). 14 V 1.8 kN Ipss = 12 mA VpsQ V, =-4V 1 MQ 1.5 V-arrow_forward1. A small-signal amplifier (a) Uses only a small portion of its load line (c) Goes into saturation once on each input cycle (b) always has an output signal in the mV range (d) is always a common-emitter amplifier 2. The parameter h fe corresponds to (a) BDc (b) Bac (c) r'e (d) r'c 3. If the de emitter current in a certain transistor amplifier is 3 mA, the approximate value of r: is (a) 3 k2 (h) 3 2 (c) 8.33 2 (d) 0.33 k2 4. A certain common-emitter amplifier has a voltage gain of 100. If the emitter bypass capacitor is removed, (a) The circuit will become un stable (b) the voltage gain will decrease (d) the Q-point will shift (c) The voltage gain will increase 5. For a common-collector amplifier, RE =1002, r'e= 10 2, and Bac=150. The ac input resistance at the base is: (a) 1500 Q (b) 15 kN (c) 110 N (d) 16.5 k2arrow_forwardThe Si transistor of of the following figure is biased for constant base current. If B-80, VCe= 8V, Rc=3k, and Vcc=15V. Find Ic, the required value of Rs, and Rs if the transistor is a Ge device. Vecarrow_forward
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