Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 7, Problem D7.14P
To determine

To show: The expression of minimum supply voltage VCC is given by

  VCC=VCEsat+P+|Av|VT

To find: The value of minimum supply voltage VCC for different situations.

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6b. The transistor consists of three terminals. The main reason for designing configurations is that it requires four terminals in order to provide the input and the output connections of the circuit for effective amplification. Now in your own words describe how Bipolar Transistors Transistor ( BJT ) various configurations are designed with relating  diagrams.  In your own estimation evalute which one is most widely used when looking at appreciable output for an amplifier?
In the lectures, we discussed how to use an NPN BJT as an emitter follower. In the circuit below, the emitter follower is connected to a non-ideal voltage source V with a source resistance R. Assume beta = 100, V = 0.7 V, V = 0 V. BE CE,sat a. If R = 0 and V₁ = 3 V, determine the value of V. b. If R = 5k and V = 3 V, determine the value of V. S c. If R = 5k , determine the value of V that will cause the BJT to start S saturating. +5V Rs Vs M Vo R₁=1K
Example 7.2 -15 Consider an amplifier circuit using a BJT having Is = 10 power supply Vcc= 10 V. A, a collector resistance Rc = 6.8 k2, and a (a) Determine the value of the bias voltage VBE required to operate the transistor at VCE = 3.2 V. What is the corresponding value of 1? (b) Find the voltage gain A, at this bias point. If an input sine-wave signal of 5-mV peak amplitude is superimposed on VBE, find the amplitude of the output sine-wave signal (assume linear operation). (c) Find the positive increment in UBE (above VBE) that drives the transistor to the edge of saturation, where UCE = 0.3 V. (d) Find the negative increment in VBE that drives the transistor to within 1% of cutoff (i.e., to UCE = 0.99Vcc).
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