Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 7.4, Problem D7.36E
To determine
To design: The given circuit in order to establish a dc emitter current of 1 mA and provide the highest voltage gain by allowing a signal to swing at the collector of
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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
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- 1. For the JFET in Figure 7.25, VGs(of) -2 to -5 V and Ipss 5 to 10 mA. %3D (a) Using these values, plot the maximum transconductance curve, minimum transconductance curve, DC bias line and the range of Q-point values. (b) Determine the values of VGs and Ip at the minimum Q-point. +VDD 9+20 V R = 2 MQ Rp = 25 kQ 1 R2 = 3 MQ Rs = 10 k WHarrow_forwardThis multiple choice questions from electronics lab the experiment name is Transistor Emitter Biasing,please solve all;it easy for you. Thx.arrow_forwardQuestiona. In an experiment the voltage required for the device is 9V dc but unfortunately the transformer available is of 220-6 Vdc. Design a circuit which can power the device (use only methods that we have studied excluding Zener diode)b. Explain the behavior of the following circuits if the input signal is triangular wave of peak voltage 5V and the biasing battery of 3Varrow_forward
- Using DC analysis, find emitter current Ie in this circuit.arrow_forwardA circuit is to be biased at a current of 5 mA and achieve an input resistance of at least 1MΩ. Should a BJT or FET be chosen for this circuit and why?arrow_forwardIn the circuit shown, the transistor has a β = 140 and that all the statement below about the transistor are true except: (a) power dissipation of the transistor is 300 mW (b) operating in the active region (c) power delivered by the 5 V source is 1.79 mW (d) in the saturation regionarrow_forward
- A circuit is built around a bi-polar NPN transisor. The base network has a diode and a capacitor in series while the collector is connected to the power supply through a resistor. if the resistor is connected to ground; i) draw the circuit ii) provide all the masking layout of the circuitarrow_forwardDraw ac equivalent circuits for the following amplifiers. Each circuit should include resistancesand one dependent voltage or current source. a) Common Drain b) Common Emitter with single emitter resistance RE c) Common Gate d) Common Source with RSAC and RSDCarrow_forwardDesign a voltage-divider bias network using a supply of 24 V, a transistor with a beta of 110, and an operating point of ICQ = 4 mA and VCEQ = 8 V. Choose VE = 1/8 VCC. * Here designing means find the values of the resistors for the circuit.arrow_forward
- b)The transistor consists of three terminals. The main reason for designing configurations is that it requires four terminals in order to provide the input and the output connections of the circuit for effective amplification. Now in your own words describe how Bipolar Transistors Transistor ( BJT ) various configurations are designed with relating diagrams. In your own estimation evalute which one is most widely used when looking at appreciable output for an amplifier?arrow_forward6) the "simplest" model of transistor behavior in this problem, i.e., B = o and IB = 0, with forward bias voltage of AVBE = 0.6V. Consider the following circuit with a transistor and two resistors. You may use 5V a) Determine the output when Vin = 0.5V. 9kN Vout Vin 3002 3kN b) Determine the output when Vin = 1.2 V. c) Determine the output when Vin = 3.6 V.arrow_forwardMost of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layersarrow_forward
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