Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 7, Problem 7.82P
To determine
The maximum value of the output resistance, drain current and the overdrive voltage.
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04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider
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A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.
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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
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- For the circuit of Figure 2. Carry out the analysis in DC and small signal with www.w www www.www Vt=0.7 V, Kn(W/L) = 4 mA/V. Ignore the Early effect. Determine: (a) The current in DC ID. (b) The gains vo/v₁, io/ii (c) The input resistance Rin and output resistance Rout. wwwwww 06402 www Ca HH {ama Ο ΜΩ www.11 Figura 2: 0.51 k www.li 12 V • 27 ΚΩ Ca +1₁ -0% 4.7 karrow_forwardIn the figure, A characteristics curve is shown for the MOSFET. Determine the following outcome and parameters using the values given in the characteristics: i) Find the Ip for the VGs = 4V, where IGs(ON) = 4.5mA ii) Find the transconductence of MOSFET; where, MOSFET having the bias voltage VGs = 4V, and 6V. %3D A (mA) A5 (mA) 10 10 VGs=+8 V 9. 7 .7 VGs =+7 V 6 5 Vas=+6 V 4 VGs =+5 V 2 VGs =+4 V Vas =+3 V 1 3 4. 5 8 Vas 10 15 20 25 Vos Vas = VT=2 V a coarrow_forwardDraw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.arrow_forward
- circuit shown in the figure, Kn = 2mA / V2, VIN = 0.7V for Mi mosfeti. So, what kind of relationship should there be between R1 and R2 resistance for mosfet to work at saturation?arrow_forward[2] What is threshold voltage for MOSFET? Derive the equation of Vt of MOSFET. V = Veo + Y V(2. Pp + |Vsbl) – /2. Pb %D Tarrow_forwardA silicon transistor is biased with base resistor method. If B=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the %3D value of the base resistor RB? Select one: a. 530 kQ b. 105 kQ c. 315 k. d. None of the abovearrow_forward
- Select a MOSFET which can be operated in both depletion and enhancement modes. E- MOSFET None of the given choices D- MOSFET as well as E - MOSFET D- MOSFETarrow_forwardProblem-5 The LED in Figure below requires 30 mA to emit a sufficient level of light. Therefore, the collector current should be approximately 30 mA. For the following circuit values, determine the amplitude of the square wave input voltage necessary to make sure that the transistor saturates. Use double the minimum value of base current as a safety ON ON margin to ensure saturation. Vcc = 9 V, VCe(sa) = 0.3 V, Rc = 220 N, RB = 3.3 kQ, ßoc =50, and VLed = 1.6 V.arrow_forwardTransistors originally were made with germanium but modern transistors use silicon for its higher heat tolerance. Transistors amplify and switch signals. They can be analog or digital. Two prevalent transistors today are Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) and Bipolar Junction Transistors (BJT).In your own understanding in the field of electronics can you compare and contrast which one has merit over the other ?arrow_forward
- Design a voltage-divider bias network using a supply of 18 V, a transistor with a beta of 110, and an operating point of Ico = 6 mA and VCEQ = 4 V. Choose VE = 1/8 Vcc. %3D %3D Use BRE = 10R2. %3D 1. How much is the emitter voltage?arrow_forwardQuestion 1: For the Mosfet in the circuit shown below: VTp = - 0.8V, and Kp = 200 uA/V2. Find Vs and Vp. Where Kp = ½ kp'W/L. lo=0.4 m Vs R= 50 k2 Rp=S ka -5 Varrow_forwardThere are three different main semiconductor devices of FETs which are JFET, D-MOSFET, and E-MOSFET. All of them are also known as active semiconductor devices. i) Briefly explain the different between JFET and D-MOSFET. ii) Given that Vp = - 6 V and IDSS = 10 mA. Draw the transfer characteristics of n-channel JFET using shorthand method. iii) State the general relationship of JFET, D-MOSFET, and E-MOSFET.arrow_forward
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